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Model SCT2280KEC
Description ROHM SCT2280KEC Power Field Effect Transistor, MOSFET, N-channel, 14 A, 1.2 kV, 0.28 ohm, 18 V, 4 V
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Brand: ROHM Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
29.63  yuan 29.63yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3711) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.28 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

108 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

1200 V

 

Technical parameters/Continuous drain current (Ids):

14A

 

Technical parameters/rise time:

19 ns

 

Technical parameters/Input capacitance (Ciss):

667pF @800V(Vds)

 

Technical parameters/rated power (Max):

108 W

 

Technical parameters/descent time:

29 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

108W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Length:

20.95 mm

 

Dimensions/Width:

15.9 mm

 

Dimensions/Height:

5.03 mm

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Alternative Energy, Power Management, HVAC, Power management, Motor Drive& Control, Motor drive and control, alternative energy

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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