Technical parameters/polarity: | NPN+PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50V, 40V |
|
Technical parameters/Maximum allowable collector current: | 100mA/500mA |
|
Technical parameters/rated power (Max): | 300 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SS-Mini-6 |
|
Dimensions/Packaging: | SS-Mini-6 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | SOT-666 |
SOT-666 NPN+PNP 50V/40V 100mA/500mA
|
||
PBLS4002V
|
Philips | 功能相似 |
SOT-666 NPN+PNP 50V/40V 100mA/500mA
|
|||
PBLS4002V
|
Nexperia | 功能相似 |
SOT-666 NPN+PNP 50V/40V 100mA/500mA
|
|||
|
|
NXP | 类似代替 | TSSOP |
低VCEsat晶体管( BISS )晶体管 Low VCEsat (BISS) transistors
|
||
PBLS4002Y,115
|
Nexperia | 完全替代 | TSSOP-6 |
TSSOP NPN+PNP 50V/40V 100mA/500mA
|
||
PBLS4002Y,115
|
NXP | 完全替代 | TSSOP-6 |
TSSOP NPN+PNP 50V/40V 100mA/500mA
|
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