Technical parameters/power supply voltage (DC): | 2.70V (min) |
|
Technical parameters/power supply current: | 60 mA |
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Technical parameters/digits: | 16 |
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Technical parameters/access time: | 110 ns |
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Technical parameters/memory capacity: | 64000000 B |
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Technical parameters/access time (Max): | 110 ns |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 2.7V ~ 3.6V |
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Technical parameters/power supply voltage (Max): | 3.6 V |
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Technical parameters/power supply voltage (Min): | 2.7 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 64 |
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Encapsulation parameters/Encapsulation: | BGA-64 |
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Dimensions/Packaging: | BGA-64 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
S29GL512P12FFIV20
|
Cypress Semiconductor | 类似代替 | BGA-64 |
SPANSION S29GL512P12FFIV20 芯片, 闪存, 或非, 512MB, FBGA-64
|
||
S29GL512P12FFIV20
|
Spansion | 类似代替 | BGA-64 |
SPANSION S29GL512P12FFIV20 芯片, 闪存, 或非, 512MB, FBGA-64
|
||
S29GL512S10DHI010
|
Spansion | 类似代替 | FBGA |
S29GL512P 系列 512 Mb (32M x 16) 3 V 100 ns 闪存-NOR 存储器 - BGA-64
|
||
S29GL512S10DHI010
|
Cypress Semiconductor | 类似代替 | FBGA-64 |
S29GL512P 系列 512 Mb (32M x 16) 3 V 100 ns 闪存-NOR 存储器 - BGA-64
|
||
S29GL512S11DHI020
|
Cypress Semiconductor | 类似代替 | BGA-64 |
NOR Flash Parallel 3V/3.3V 512Mbit 32M x 16Bit 110ns 64Pin FBGA Tray
|
||
S29GL512S11DHI020
|
Spansion | 类似代替 | FBGA-64 |
NOR Flash Parallel 3V/3.3V 512Mbit 32M x 16Bit 110ns 64Pin FBGA Tray
|
||
S29GL512S11DHIV10
|
Spansion | 类似代替 | FBGA-64 |
SPANSION S29GL512S11DHIV10 闪存, 或非, 512 Mbit, 32M x 16位, 并行, FBGA, 64 引脚
|
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