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Model RSR030N06TL

Description N Channel MOSFET transistor, ROHM # # # MOSFET transistor, ROHM

Brand: ROHM Semiconductor

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.06 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1 W
Technical parameters/threshold voltage:	2.5 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Continuous drain current (Ids):	3A
Technical parameters/rise time:	12 ns
Technical parameters/Input capacitance (Ciss):	380pF @10V(Vds)
Technical parameters/rated power (Max):	1 W
Technical parameters/descent time:	10 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	540mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	3 mm
Dimensions/Width:	1.8 mm
Dimensions/Height:	0.95 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free