Technical parameters/rated voltage (DC): | -30.0 V |
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Technical parameters/rated current: | -200 mA |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 1.4 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 150 mW |
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Technical parameters/threshold voltage: | 2.5 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 200 mA |
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Technical parameters/rise time: | 5 ns |
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Technical parameters/Input capacitance (Ciss): | 30pF @10V(Vds) |
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Technical parameters/rated power (Max): | 150 mW |
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Technical parameters/descent time: | 40 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/dissipated power (Max): | 150 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 1.6 mm |
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Dimensions/Width: | 0.8 mm |
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Dimensions/Height: | 0.7 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Not For New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RE1E002SPTCL
|
ROHM Semiconductor | 功能相似 | SOT-3 |
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
|
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