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Model RS1E300GNTB
Description Transistor, MOSFET, N-channel, 80 A, 30 V, 0.0017 ohm, 10 V, 2.5 V
Product QR code
Brand: ROHM Semiconductor
Packaging HSOP-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.17  yuan 3.17yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3432) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

2.2 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3 W

 

Technical parameters/threshold voltage:

2.5 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30 V

 

Technical parameters/Continuous drain current (Ids):

30A

 

Technical parameters/rise time:

14.8 ns

 

Technical parameters/Input capacitance (Ciss):

2500pF @15V(Vds)

 

Technical parameters/descent time:

27 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

3W (Ta), 33W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

HSOP-8

 

Dimensions/Packaging:

HSOP-8

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RS1E301GNTB1 RS1E301GNTB1 ROHM Semiconductor 功能相似 HSOP
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0017 ohm, 10 V, 2.5 V

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