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Encapsulation parameters/Encapsulation: | HSOP-8 |
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Dimensions/Packaging: | HSOP-8 |
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Other/Gate Voltage Vgs: | 2.7V@200uA |
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Other/Vgs (maximum value): | ±20V |
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Other/continuous drain current Id: | 12A(Ta),36A(Tc) |
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Other/drain source voltage Vds: | 60V |
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Other/Gate Charge Qg: | 26nC@10V |
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Other/RdsOn (Max) @ Id, Vgs: | 12.7mOhm@12A,10V |
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Other/Operating Temperature: | 150℃(TJ) |
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Other/Packaging/Shell: | 8-HSOP |
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Other/FET types: | N-Channel |
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Other/Pd - power dissipation (Max): | 3W(Ta) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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