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Model RQ3E120BNTB
Description ROHM RQ3E120BNTB Transistor, MOSFET, N-channel, 12 A, 30 V, 0.0066 ohm, 10 V, 2.5 V
Product QR code
Brand: ROHM Semiconductor
Packaging HSMT-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.34  yuan 1.34yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6892) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.0066 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2 W

 

Technical parameters/threshold voltage:

2.5 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/rise time:

30 ns

 

Technical parameters/Input capacitance (Ciss):

1500pF @15V(Vds)

 

Technical parameters/descent time:

12 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

HSMT-8

 

Dimensions/Packaging:

HSMT-8

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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