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Model RPT-34PB3F

Description RPT-34PB3F Series 800 nm 32 V 30 mA 120 ° through-hole phototransistor

Brand: ROHM Semiconductor

Packaging T-1

Delivery time

Packaging method Bulk

Standard packaging quantity 1

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Technical parameters/rated power:	0.15 W
Technical parameters/number of channels:	1
Technical parameters/number of pins:	2
Technical parameters/wavelength:	800 nm
Technical parameters/perspective:	72°
Technical parameters/peak wavelength:	800 nm
Technical parameters/dissipated power:	150 mW
Technical parameters/rise time:	10 µs
Technical parameters/output power:	150 mW
Technical parameters/breakdown voltage (collector emitter):	32 V
Technical parameters/rated power (Max):	150 mW
Technical parameters/descent time:	10 µs
Technical parameters/descent time (Max):	10000 ns
Technical parameters/rise time (Max):	10000 ns
Technical parameters/operating temperature (Max):	85 ℃
Technical parameters/operating temperature (Min):	-25 ℃
Technical parameters/dissipated power (Max):	150 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	2
Encapsulation parameters/Encapsulation:	T-1
Dimensions/Height:	5.2 mm
Dimensions/Packaging:	T-1
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-25℃ ~ 85℃ (TA)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Bulk
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99