Technical parameters/polarity: | NPN+PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Encapsulation parameters/Encapsulation: | US-6 |
|
Dimensions/Packaging: | US-6 |
|
Other/Product Lifecycle: | Obsolete |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DCX100NS-7
|
Diodes | 功能相似 | SOT-563-6 |
双极晶体管 - 预偏置 150mW R1+/-R2 R3=R4 Dual Complementary
|
||
EMD29T2R
|
ROHM Semiconductor | 功能相似 | SOT-563 |
EMT NPN+PNP 50V 500mA
|
||
|
|
Toshiba | 完全替代 | US-6 |
US NPN+PNP 50V 100mA
|
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