Technical parameters/Input voltage (DC): | 4.70V ~ 18.0V |
|
Technical parameters/output voltage: | 4.5 V |
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Technical parameters/Static current: | 800 µA |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | 40 ℃ |
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Technical parameters/input voltage: | 4.7V ~ 18V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.91 mm |
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Dimensions/Height: | 1.58 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | 40℃ ~ 125℃ |
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Physical parameters/temperature coefficient: | ±3 ppm/℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
REF5045ID
|
TI | 完全替代 | SOIC-8 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
||
|
|
Burr Brown | 完全替代 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
|||
REF5045IDR
|
TI | 类似代替 | SOIC-8 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
||
|
|
Burr Brown | 类似代替 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
|||
REF5045IDRG4
|
TI | 类似代替 | SOIC-8 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
||
|
|
Burr Brown | 类似代替 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
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