Technical parameters/tolerances: | ±0.05 % |
|
Technical parameters/Input voltage (DC): | 2.70V ~ 18.0V |
|
Technical parameters/output current: | 10 mA |
|
Technical parameters/power supply current: | 1.2 mA |
|
Technical parameters/Static current: | 800 µA |
|
Technical parameters/output voltage (Max): | 2.048 V |
|
Technical parameters/output voltage (Min): | 2.048 V |
|
Technical parameters/input voltage: | 2.7V ~ 18V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | -40℃ ~ 125℃ (TA) |
|
Physical parameters/temperature coefficient: | ±3 ppm/℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
REF5020IDG4
|
TI | 完全替代 | SOIC-8 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
||
|
|
Burr Brown | 完全替代 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
|||
REF5020IDR
|
TI | 完全替代 | SOIC-8 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
||
|
|
Burr Brown | 完全替代 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
|||
REF5020IDRG4
|
TI | 完全替代 | SOIC-8 |
低噪声,极低漂移,高精度电压基准 Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE
|
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