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Model RE1C001ZPTL

Description P Channel MOSFET transistor, ROHM # # # MOSFET transistor, ROHM Semiconductor

Brand: ROHM Semiconductor

Packaging SOT-416-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	2.5 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	150 mW
Technical parameters/threshold voltage:	1 V
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Leakage source breakdown voltage:	20 V
Technical parameters/Continuous drain current (Ids):	0.1A
Technical parameters/rise time:	62 ns
Technical parameters/Input capacitance (Ciss):	15pF @10V(Vds)
Technical parameters/descent time:	137 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	150mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-416-3
Dimensions/Length:	1.7 mm
Dimensions/Width:	0.9 mm
Dimensions/Height:	0.7 mm
Dimensions/Packaging:	SOT-416-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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	RZM001P02T2L	ROHM Semiconductor	功能相似	SOT-723-3	P 通道 MOSFET 晶体管，ROHM ### MOSFET 晶体管，ROHM Semiconductor