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Model RCD040N25TL
Description CPT N-CH 250V 4A
Product QR code
Brand: ROHM Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.11  yuan 5.11yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7766) Minimum order quantity(1)
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Technical parameters/drain source resistance:

1 Ω

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

20 W

 

Technical parameters/drain source voltage (Vds):

250 V

 

Technical parameters/Leakage source breakdown voltage:

250 V

 

Technical parameters/Continuous drain current (Ids):

4A

 

Technical parameters/rise time:

15 ns

 

Technical parameters/Input capacitance (Ciss):

410pF @25V(Vds)

 

Technical parameters/rated power (Max):

20 W

 

Technical parameters/descent time:

12 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

20W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RCD080N25TL RCD080N25TL ROHM Semiconductor 类似代替 TO-252-3
N 通道 MOSFET 晶体管，ROHM ### MOSFET 晶体管，ROHM
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