Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 140 mΩ |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 85 W |
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Technical parameters/threshold voltage: | 3.25 V |
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Technical parameters/drain source voltage (Vds): | 200 V |
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Technical parameters/Leakage source breakdown voltage: | 200 V |
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Technical parameters/Continuous drain current (Ids): | 10A |
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Technical parameters/rise time: | 35 ns |
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Technical parameters/Input capacitance (Ciss): | 1400pF @25V(Vds) |
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Technical parameters/descent time: | 15 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 850mW (Ta), 20W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Not For New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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