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Model R6015ENZC8
Description ROHM R6015ENZC8 Power Field Effect Transistor, MOSFET, N-channel, 15 A, 600 V, 0.26 ohm, 10 V, 4 V New
Product QR code
Brand: ROHM Semiconductor
Packaging TO-3-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
14.65  yuan 14.65yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3705) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.26 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

120 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Continuous drain current (Ids):

15A

 

Technical parameters/rise time:

55 ns

 

Technical parameters/Input capacitance (Ciss):

910pF @25V(Vds)

 

Technical parameters/descent time:

45 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

120W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-3-3

 

Dimensions/Packaging:

TO-3-3

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Bulk

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

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