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Model QS5U17TR

Description Transistor, MOSFET, N-channel, 2 A, 30 V, 0.154 ohm, 4.5 V, 1.5 V

Brand: ROHM Semiconductor

Packaging TSOT-23-5

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	30.0 V
Technical parameters/rated current:	2.00 A
Technical parameters/number of channels:	1
Technical parameters/number of pins:	5
Technical parameters/drain source resistance:	0.154 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1.25 W
Technical parameters/threshold voltage:	1.5 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Leakage source breakdown voltage:	30.0 V
Technical parameters/Continuous drain current (Ids):	2.00 A
Technical parameters/rise time:	10 ns
Technical parameters/Input capacitance (Ciss):	175pF @10V(Vds)
Technical parameters/rated power (Max):	900 mW
Technical parameters/descent time:	8 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	900mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	5
Encapsulation parameters/Encapsulation:	TSOT-23-5
Dimensions/Packaging:	TSOT-23-5
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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