Technical parameters/rated voltage (DC): | 5.00 V |
|
Technical parameters/operating voltage: | 1.80 V |
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Technical parameters/rated power: | 180 mW |
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Technical parameters/forward voltage: | 1.5 V |
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Technical parameters/wavelength: | 880 nm |
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Technical parameters/perspective: | 120° |
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Technical parameters/peak wavelength: | 880 nm |
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Technical parameters/dissipated power: | 180 W |
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Technical parameters/rise time: | 1.00 µs |
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Technical parameters/test current: | 100 mA |
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Technical parameters/forward current: | 100 mA |
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Technical parameters/forward current (Max): | 100 mA |
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Technical parameters/operating temperature (Max): | 100 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | PLCC-2 |
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Dimensions/Length: | 3.4 mm |
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Dimensions/Width: | 3 mm |
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Dimensions/Height: | 2.1 mm |
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Dimensions/Packaging: | PLCC-2 |
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Physical parameters/color: | Infrared |
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Physical parameters/operating temperature: | -55℃ ~ 100℃ (TA) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VSMF3710-GS08
|
Vishay Semiconductor | 功能相似 | PLCC-2 |
高速红外发光二极管,符合RoHS , 890纳米, GaAlAs的双异质 High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
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||
VSML3710-GS08
|
VISHAY | 功能相似 | PLCC-2 |
高功率红外发光二极管, 940纳米,砷化镓铝/砷化镓 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
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VSML3710-GS08
|
Vishay Semiconductor | 功能相似 | PLCC-2 |
高功率红外发光二极管, 940纳米,砷化镓铝/砷化镓 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
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VSML3710-GS08
|
Vishay Intertechnology | 功能相似 | LCC |
高功率红外发光二极管, 940纳米,砷化镓铝/砷化镓 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
||
VSML3710-GS08
|
Vishay Dale | 功能相似 |
高功率红外发光二极管, 940纳米,砷化镓铝/砷化镓 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
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