logo
BOM RFQ Login Register
English
Home Page   Discrete Device   transistor   MOSpipe   FQD5N20LTM
Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Model FQD5N20LTM
Description Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.4  yuan 2.4yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4980) Minimum order quantity(1)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/rated voltage (DC):

200 V

 

Technical parameters/rated current:

3.80 A

 

Technical parameters/drain source resistance:

1.20 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Leakage source breakdown voltage:

200 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

3.80 A

 

Technical parameters/rise time:

90 ns

 

Technical parameters/Input capacitance (Ciss):

325pF @25V(Vds)

 

Technical parameters/rated power (Max):

2.5 W

 

Technical parameters/descent time:

50 ns

 

Technical parameters/dissipated power (Max):

2.5W (Ta), 37W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Most helpful | Latest
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Product inquiry

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MTD4N20E MTD4N20E Motorola 功能相似
TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2Ω
STD5N20LT4 STD5N20LT4 ST Microelectronics 功能相似 TO-252-3
STMICROELECTRONICS STD5N20LT4 晶体管, MOSFET, N沟道, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V
PDF

Newly listed products

Product service

PLATFORM

CONTACT US

  • ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
  • Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
  • Tel: +86-0755-82866643

CONTACT INFORMATION

  • WhatsApp：+8615820418003
  • Facebook Messenger：Emily He
  • WeChat：15820418003
  • Telegram：+8613641420552
  • Microsoft Teams：newkasion1
  • E-mail：sales@icgoodfind.com
  • Technical Cooperation：Ericguo@icgoodfind.com
Product Index：
Brand Index：
Friendship link : Chinese Electronic Component Distributor | STM | broadcom | Altera | ISSI | onsemi | nexperia | NXP | Microchip | diodes | lattice | Electronic Component Distributor | Analog Devices | XILINX | Texas Instruments | Infineon | TiToK | YouTube | X | Linkedln | Facebook | VK |

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear