Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 300 V |
|
Technical parameters/Maximum allowable collector current: | 0.5A |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Packaging: | SOT-223 |
|
Other/Product Lifecycle: | Obsolete |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
CJ | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR PZTA92 单晶体管 双极, 通用, PNP, 300 V, 50 MHz, 1 W, -500 mA, 25 hFE
|
||
PZTA92
|
NXP | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR PZTA92 单晶体管 双极, 通用, PNP, 300 V, 50 MHz, 1 W, -500 mA, 25 hFE
|
||
PZTA92
|
Infineon | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR PZTA92 单晶体管 双极, 通用, PNP, 300 V, 50 MHz, 1 W, -500 mA, 25 hFE
|
||
PZTA92
|
Nexperia | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR PZTA92 单晶体管 双极, 通用, PNP, 300 V, 50 MHz, 1 W, -500 mA, 25 hFE
|
||
PZTA92
|
ON Semiconductor | 功能相似 | SOT-223-4 |
FAIRCHILD SEMICONDUCTOR PZTA92 单晶体管 双极, 通用, PNP, 300 V, 50 MHz, 1 W, -500 mA, 25 hFE
|
||
PZTA92T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR PZTA92T1G. 双极性晶体管, PNP, -50mA, -300V, SOT223
|
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