Technical parameters/tolerances: | ±2 % |
|
Technical parameters/forward voltage: | 1.1V @100mA |
|
Technical parameters/dissipated power: | 0.55 W |
|
Technical parameters/test current: | 5 mA |
|
Technical parameters/voltage regulation value: | 9.99 V |
|
Technical parameters/forward voltage (Max): | 1.1V @100mA |
|
Technical parameters/rated power (Max): | 310 mW |
|
Technical parameters/dissipated power (Max): | 550 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | SOD-323 |
|
Dimensions/Packaging: | SOD-323 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Physical parameters/temperature coefficient: | 6.4 mV/K |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX384-B10
|
Nexperia | 类似代替 | SOD-323 |
300mW,BZX384 系列,NXP Semiconductors 齐纳电压容差为 2% (BZX384-B) 和大约 5% (BZX384-C) 表面安装外壳:SOD-323 (SC-76) ### 齐纳二极管,NXP Semiconductors
|
||
BZX384-B10
|
NXP | 类似代替 | SOD-323 |
300mW,BZX384 系列,NXP Semiconductors 齐纳电压容差为 2% (BZX384-B) 和大约 5% (BZX384-C) 表面安装外壳:SOD-323 (SC-76) ### 齐纳二极管,NXP Semiconductors
|
||
BZX384-B10,115
|
NXP | 类似代替 | SOD-323 |
NXP BZX384-B10,115 单管二极管 齐纳, 10 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C
|
||
PZU10B1,115
|
Nexperia | 类似代替 | SOD-323 |
SOD-323F 9.66V 550mW
|
||
PZU10B1,115
|
NXP | 类似代替 | SOD-323 |
SOD-323F 9.66V 550mW
|
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