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Model PZT3906T1G
Description General Purpose Transistor PNP Silicon
Product QR code
Brand: ON Semiconductor
Packaging TO-261-4
Delivery time
Packaging method Tape
Standard packaging quantity 1
4.79  yuan 4.79yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7514) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-40.0 V

 

Technical parameters/rated current:

-200 mA

 

Technical parameters/polarity:

PNP

 

Technical parameters/breakdown voltage (collector emitter):

40 V

 

Technical parameters/Maximum allowable collector current:

0.2A

 

Technical parameters/minimum current amplification factor (hFE):

100 @10mA, 1V

 

Technical parameters/rated power (Max):

1.5 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PZT3906 PZT3906 Fairchild 功能相似 TO-261-4
FAIRCHILD SEMICONDUCTOR PZT3906 晶体管 双极-射频, PNP, 40 V, 1 W, 200 mA, 300 hFE
PDF
PZT3906 PZT3906 CJ 功能相似 SOT-223
FAIRCHILD SEMICONDUCTOR PZT3906 晶体管 双极-射频, PNP, 40 V, 1 W, 200 mA, 300 hFE
PDF
PZT3906 PZT3906 ST Microelectronics 功能相似
FAIRCHILD SEMICONDUCTOR PZT3906 晶体管 双极-射频, PNP, 40 V, 1 W, 200 mA, 300 hFE
PDF
PZT3906T1 PZT3906T1 ON Semiconductor 完全替代 TO-261-4
通用晶体管PNP硅 General Purpose Transistor PNP Silicon
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