Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 1.05 W |
|
Technical parameters/gain bandwidth product: | 250 MHz |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @10mA, 1V |
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Technical parameters/rated power (Max): | 1.05 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | 65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-223-4 |
|
Dimensions/Length: | 6.7 mm |
|
Dimensions/Width: | 3.7 mm |
|
Dimensions/Height: | 1.7 mm |
|
Dimensions/Packaging: | SOT-223-4 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PZT3906
|
Fairchild | 功能相似 | TO-261-4 |
PNP Silicon Switching Transistor
|
||
|
|
CJ | 功能相似 | SOT-223 |
PNP Silicon Switching Transistor
|
||
PZT3906
|
ST Microelectronics | 功能相似 |
PNP Silicon Switching Transistor
|
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