Chip AI consultant
Technical parameters/output power: | 240 W |
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Technical parameters/operating temperature (Max): | 225 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Other/ECCN (US): | EAR99 |
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Other/Configuration: | Dual Common Source |
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Other/Channel Mode: | Enhancement |
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Other/Number of Elements per Chip: | 2 |
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Other/Mode of Operation: | 1-Carrier W-CDMA |
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Other/Process Technologies: | LDMOS |
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Other/Maximum Drain Source Voltage (V): | 65 |
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Other/Maximum Gate Source Voltage (V): | 10 |
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Other/Maximum VSWR: | 10 |
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Other/Maximum Gate Source Leakage Current (nA): | 1000 |
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Other/Maximum IDSS (uA): | 10 |
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Other/Maximum Drain Source Resistance (mOhm): | 110(Typ)@10V |
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Other/Output Power (W): | 240 |
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Other/Typical Power Gain (dB): | 14 |
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Other/Maximum Frequency (MHz): | 1995 |
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Other/Minimum Frequency (MHz): | 1930 |
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Other/Typical Draft Efficiency (%): | 49 |
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Other/Minimum Operating Temperature (° C): | -65 |
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Other/Maximum Operating Temperature (° C): | 225 |
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