Chip AI consultant
Technical parameters/output power: | 180 W |
|
Technical parameters/operating temperature (Max): | 225 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Other/Configuration: | Dual Common Source |
|
Other/Channel Mode: | Enhancement |
|
Other/Number of Elements per Chip: | 2 |
|
Other/Mode of Operation: | 1-Carrier W-CDMA |
|
Other/Process Technologies: | LDMOS |
|
Other/Maximum Drain Source Voltage (V): | 65 |
|
Other/Maximum Gate Source Voltage (V): | 10 |
|
Other/Maximum VSWR: | 10 |
|
Other/Maximum Gate Source Leakage Current (nA): | 100 |
|
Other/Maximum IDSS (uA): | 1 |
|
Other/Maximum Drain Source Resistance (mOhm): | 180(Typ)@10V |
|
Other/Output Power (W): | 180 |
|
Other/Typical Power Gain (dB): | 16.5 |
|
Other/Maximum Frequency (MHz): | 1880 |
|
Other/Minimum Frequency (MHz): | 1805 |
|
Other/Typical Draft Efficiency (%): | 51 |
|
Other/Minimum Operating Temperature (° C): | -65 |
|
Other/Maximum Operating Temperature (° C): | 225 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review