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Model SPW15N60C3
Description INFINEON SPW15N60C3 Power Field Effect Transistor, MOSFET, N-channel, 15 A, 600 V, 0.25 ohm, 10 V, 3 V
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Brand: Infineon
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
18.63  yuan 18.63yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7035) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

650 V

 

Technical parameters/rated current:

15.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.25 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

156 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/Input capacitance:

2.40 nF

 

Technical parameters/gate charge:

114 nC

 

Technical parameters/drain source voltage (Vds):

650 V

 

Technical parameters/Leakage source breakdown voltage:

600 V

 

Technical parameters/Continuous drain current (Ids):

15.0 A

 

Technical parameters/rise time:

5 ns

 

Technical parameters/Input capacitance (Ciss):

1660pF @25V(Vds)

 

Technical parameters/rated power (Max):

156 W

 

Technical parameters/descent time:

5 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

156W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Length:

16.13 mm

 

Dimensions/Width:

5.21 mm

 

Dimensions/Height:

21.1 mm

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Not Recommended

 

Other/Packaging Meth

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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