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Model PUMH10,115
Description NXP PUMH10,115 Bipolar pre bias/digital transistor, BRT, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 resistance ratio, SOT-363
Product QR code
Brand: NXP
Packaging SOT-363-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.26  yuan 7.26yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3289) Minimum order quantity(1)
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Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

0.3 W

 

Technical parameters/breakdown voltage (collector emitter):

50 V

 

Technical parameters/Maximum allowable collector current:

100mA

 

Technical parameters/minimum current amplification factor (hFE):

100 @10mA, 5V

 

Technical parameters/rated power (Max):

300 mW

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

300 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SOT-363-6

 

Dimensions/Packaging:

SOT-363-6

 

Physical parameters/operating temperature:

-65℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Automotive, Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PUMH10,115 PUMH10,115 NXP 类似代替 SOT-363-6
PUMH10 系列 50 V 100 mA 表面贴装 NPN/NPN 带电阻 晶体管 - SOT-363
PDF
PUMH10,125 PUMH10,125 NXP 完全替代 TSSOP-6
TSSOP NPN 50V 100mA
PDF

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