Technical parameters/rated power: | 11 W |
|
Technical parameters/number of output interfaces: | 1 |
|
Technical parameters/output voltage: | 0.55V ~ 1.8V |
|
Technical parameters/output current: | 6 A |
|
Technical parameters/output power: | 10.8 W |
|
Technical parameters/Input voltage (Max): | 3.65 V |
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Technical parameters/input voltage (Min): | 2.95 V |
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Technical parameters/output current (Max): | 6 A |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SMD-6 |
|
Dimensions/Packaging: | SMD-6 |
|
Physical parameters/operating temperature: | -40℃ ~ 85℃ |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | ITE(Business) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PTH03050YAZ
|
Artesyn Embedded Technologies | 完全替代 | SMD-6 |
DDR 存储器电源解决方案,Texas Instruments 专门设计用于 DDR 和 QDR 存储器应用中的总线端接。 ### DDR 存储器电源解决方案,Texas Instruments
|
||
PTH03050YAZ
|
TI | 完全替代 | DIP-6 |
DDR 存储器电源解决方案,Texas Instruments 专门设计用于 DDR 和 QDR 存储器应用中的总线端接。 ### DDR 存储器电源解决方案,Texas Instruments
|
||
PTH03050YAZT
|
Emerson Network Power | 完全替代 | 22.1 mm x 12.57 mm x 8.5 mm |
非隔离式DC/DC转换器 6A 3.3V-In Bus Term Pwr Mdl for DDR/QDR
|
||
PTH03050YAZT
|
TI | 完全替代 | DIP-6 |
非隔离式DC/DC转换器 6A 3.3V-In Bus Term Pwr Mdl for DDR/QDR
|
||
|
|
Artesyn Embedded Technologies | 完全替代 | SMD-6 |
非隔离式DC/DC转换器 6A 3.3V-In Bus Term Pwr Mdl for DDR/QDR
|
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