Chip AI consultant
Technical parameters/output power: | 25 W |
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Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Other/Configuration: | Single |
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Other/Channel Mode: | Enhancement |
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Other/Channel Type: | N |
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Other/Number of Elements per Chip: | 1 |
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Other/Mode of Operation: | CW |
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Other/Process Technologies: | LDMOS |
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Other/Maximum Drain Source Voltage (V): | 65 |
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Other/Maximum Gate Source Voltage (V): | 10 |
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Other/Maximum VSWR: | 10 |
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Other/Maximum Gate Source Leakage Current (nA): | 1000 |
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Other/Maximum IDSS (uA): | 10 |
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Other/Maximum Drain Source Resistance (mOhm): | 50(Typ)@10V |
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Other/Output Power (W): | 25 |
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Other/Typical Power Gain (dB): | 20 |
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Other/Maximum Frequency (MHz): | 2700 |
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Other/Minimum Frequency (MHz): | 2300 |
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Other/Typical Draft Efficiency (%): | 30 |
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Other/Minimum Operating Temperature (° C): | -40 |
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Other/Maximum Operating Temperature (° C): | 200 |
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Other/Automotive: | Unknown |
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