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Model APTC60HM35T3G

Description Full Bridge Super Junction MOSFET Power Module

Brand: Microsemi

Packaging SP-3

Delivery time

Packaging method Bulk

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	35 mΩ
Technical parameters/polarity:	N-CH
Technical parameters/dissipated power:	416 W
Technical parameters/threshold voltage:	2.1 V
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/Leakage source breakdown voltage:	600 V
Technical parameters/Continuous drain current (Ids):	72A
Technical parameters/rise time:	30 ns
Technical parameters/Input capacitance (Ciss):	14000pF @25V(Vds)
Technical parameters/rated power (Max):	416 W
Technical parameters/descent time:	84 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-40 ℃
Technical parameters/dissipated power (Max):	416000 mW
Encapsulation parameters/installation method:	Screw
Package parameters/number of pins:	32
Encapsulation parameters/Encapsulation:	SP-3
Dimensions/Length:	73.4 mm
Dimensions/Width:	40.8 mm
Dimensions/Height:	11.5 mm
Dimensions/Packaging:	SP-3
Physical parameters/operating temperature:	-40℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Bulk
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free