Technical parameters/frequency: | 200 MHz |
|
Technical parameters/dissipated power: | 0.625 W |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
|
Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Length: | 5.2 mm |
|
Dimensions/Width: | 4.19 mm |
|
Dimensions/Height: | 5.33 mm |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC33725TA
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor BC33725TA , NPN 晶体管, 800mA, Vce=45 V, HFE:100, 100 MHz, 3引脚 TO-92封装
|
||
PN2907ATA
|
Fairchild | 类似代替 | TO-226-3 |
小信号 PNP 晶体管，60 至 160V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
PN2907ATF
|
Fairchild | 类似代替 | TO-226-3 |
ON Semiconductor PN2907ATF , PNP 晶体管, 800mA, Vce=60 V, HFE:100, 100 MHz, 3引脚 TO-92封装
|
||
PN2907ATFR
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR PN2907ATFR 单晶体管 双极, PNP, -60 V, 200 MHz, 625 mW, -800 mA, 50 hFE
|
||
PN3645_D74Z
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT PNP 60V 0.8A 3Pin TO-92 Ammo
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review