Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 1.00 A |
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Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 1A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
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Technical parameters/rated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 完全替代 | TO-92 |
Trans GP BJT NPN 40V 1A 3Pin TO-92 Bulk
|
||
PN2222ANLBU
|
Fairchild | 完全替代 | TO-92-3 |
Trans GP BJT NPN 40V 1A 3Pin TO-92 Bulk
|
||
PN2222ATA
|
Fairchild | 完全替代 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR PN2222ATA 单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 1 A, 300 hFE
|
||
PN2222ATA
|
ON Semiconductor | 完全替代 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR PN2222ATA 单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 1 A, 300 hFE
|
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