Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/Maximum allowable collector current: | 0.2A |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @10mA, 1V |
|
Technical parameters/rated power (Max): | 200 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-323-3 |
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Dimensions/Packaging: | SOT-323-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMST3904,115
|
NXP | 完全替代 | SOT-323-3 |
NPN 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
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