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Model PMP5201V,115

Description PNP Transistor, NXP # # # bipolar transistor, NXP Semiconductors

Brand: NXP

Packaging SOT-666

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/frequency:	175 MHz
Technical parameters/polarity:	PNP
Technical parameters/dissipated power:	300 mW
Technical parameters/gain bandwidth product:	175 MHz
Technical parameters/breakdown voltage (collector emitter):	45 V
Technical parameters/Maximum allowable collector current:	0.1A
Technical parameters/minimum current amplification factor (hFE):	200 @2mA, 5V
Technical parameters/maximum current amplification factor (hFE):	200 @2mA, 5V
Technical parameters/rated power (Max):	300 mW
Technical parameters/DC current gain (hFE):	290
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	300 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	SOT-666
Dimensions/Length:	1.7 mm
Dimensions/Width:	1.3 mm
Dimensions/Height:	0.6 mm
Dimensions/Packaging:	SOT-666
Physical parameters/weight:	0.004535924 kg
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	PMP5201V	NXP	类似代替	SOT-666	NXP PMP5201V 双极晶体管阵列, PNP, 45 V, 200 mW, -100 mA, 290 hFE, SOT-666	PDF
	PMP5201V,115	NXP	功能相似	SOT-666	小信号 PNP 晶体管，Nexperia ### 双极晶体管，Nexperia	PDF