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Model PMGD370XN

Description NXP PMGD370XN Dual field-effect transistor, MOSFET, dual N-channel, 740 mA, 30 V, 0.37 ohm, 4.5 V, 1 V

Brand: NXP

Packaging SOT-363

Delivery time

Packaging method Cut Tape (CT)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(3361) Minimum order quantity(1)

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Technical parameters/number of pins:	6
Technical parameters/drain source resistance:	0.37 Ω
Technical parameters/polarity:	Dual N-Channel
Technical parameters/dissipated power:	410 mW
Technical parameters/threshold voltage:	1 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	0.74A
Technical parameters/Input capacitance (Ciss):	37pF @25V(Vds)
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	0.41 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	SOT-363
Dimensions/Length:	2.2 mm
Dimensions/Width:	1.35 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-363
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Cut Tape (CT)
Other/Manufacturing Applications:	Portable Devices, Industrial, Power Management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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