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Model PMDT290UNE,115
Description Nexperia Dual Si N-channel MOSFET PMDT290UNE, 115, 800mA, Vds=20V, 6-pin SOT-666 package
Product QR code
Brand: Nexperia
Packaging SOT-666
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.48  yuan 0.48yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3568) Minimum order quantity(1)
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Technical parameters/number of pins:

6

 

Technical parameters/drain source resistance:

0.29 Ω

 

Technical parameters/dissipated power:

0.5 W

 

Technical parameters/threshold voltage:

750 mV

 

Technical parameters/Input capacitance:

55 pF

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/rise time:

4 ns

 

Technical parameters/Input capacitance (Ciss):

83pF @10V(Vds)

 

Technical parameters/rated power (Max):

500 mW

 

Technical parameters/descent time:

31 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

500 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SOT-666

 

Dimensions/Length:

1.7 mm

 

Dimensions/Width:

1.3 mm

 

Dimensions/Height:

0.6 mm

 

Dimensions/Packaging:

SOT-666

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, power management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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