Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 0.4 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 400 mW |
|
Technical parameters/rated voltage: | 50 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | TSOP-457 |
|
Dimensions/Packaging: | TSOP-457 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | MOSFET drive |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMD9002D
|
Nexperia | 功能相似 | 6 |
低VCEsat晶体管( BISS )晶体管 Low VCEsat (BISS) transistors
|
||
PMD9002D,115
|
NXP | 功能相似 | TSOP-457 |
Trans Digital BJT NPN 50V 100mA 6Pin TSOP T/R
|
||
|
|
Nexperia | 功能相似 | SOT-457 |
Trans Digital BJT NPN 50V 100mA 6Pin TSOP T/R
|
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