Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-236 |
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Dimensions/Packaging: | TO-236 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
UMW | 类似代替 | SOT-23-3 |
SMD General Purpose NPN Transistors
|
||
MMBT5551
|
ST Microelectronics | 类似代替 | SOT-23-3 |
SMD General Purpose NPN Transistors
|
||
|
|
GMR Semiconductor | 类似代替 | SOT-23-3 |
SMD General Purpose NPN Transistors
|
||
|
|
FMS | 类似代替 | SOT-23-3 |
SMD General Purpose NPN Transistors
|
||
|
|
Bourns J.W. Miller | 类似代替 | SOT-23 |
SMD General Purpose NPN Transistors
|
||
|
|
GUANGDONG HOTTECH INDUSTRIAL | 类似代替 | SOT-23-3 |
SMD General Purpose NPN Transistors
|
||
|
|
BORN | 类似代替 | SOT-23 |
SMD General Purpose NPN Transistors
|
||
PMBT5550,215
|
Nexperia | 类似代替 | SOT-23-3 |
Nexperia PMBT5550,215 , NPN 晶体管, 300 mA, Vce=140 V, HFE:20, 100 MHz, 3引脚 SOT-23封装
|
||
PMBT5551
|
NXP | 完全替代 | SOT-23 |
NXP PMBT5551 单晶体管 双极, NPN, 160 V, 250 mW, 300 mA, 80 hFE
|
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