Technical parameters/rise/fall time: | 4µs, 3µs |
|
Technical parameters/number of channels: | 1 |
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Technical parameters/forward voltage: | 1.2 V |
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Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/isolation voltage: | 5000 Vrms |
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Technical parameters/forward current: | 50 mA |
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Technical parameters/output voltage (Max): | 70 V |
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Technical parameters/forward voltage (Max): | 1.4 V |
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Technical parameters/forward current (Max): | 50 mA |
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Technical parameters/descent time (Max): | 18 µs |
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Technical parameters/rise time (Max): | 18 µs |
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Technical parameters/operating temperature (Max): | 100 ℃ |
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Technical parameters/operating temperature (Min): | -30 ℃ |
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Technical parameters/dissipated power (Max): | 200 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | DIP-4 |
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Dimensions/Height: | 3.5 mm |
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Dimensions/Packaging: | DIP-4 |
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Physical parameters/operating temperature: | -30℃ ~ 100℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FOD817DS
|
ON Semiconductor | 功能相似 | PDIP-4 |
ON Semiconductor 光耦 FOD817DS, 直流输入, 光电晶体管输出, 4引脚 MDIP 封装
|
||
FOD817DSD
|
Fairchild | 功能相似 | DIP-4 |
ON Semiconductor 光耦 FOD817DSD, 直流输入, 光电晶体管输出, 4引脚 PDIP 封装
|
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