Technical parameters/power supply voltage (DC): | 5.00 V, 5.50 V (max) |
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Technical parameters/clock frequency: | 20.0 MHz, 4.00 MHz |
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Technical parameters/RAM size: | 128 B |
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Technical parameters/digits: | 8 |
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Technical parameters/dissipated power: | 1000 mW |
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Technical parameters/I/O pin count: | 16 |
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Technical parameters/access time: | 20.0 µs |
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Technical parameters/kernel architecture: | PIC |
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Technical parameters/internal nuclear architecture: | PIC16 |
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Technical parameters/Analog to Digital Conversion (ADC): | 1 |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | 40 ℃ |
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Technical parameters/dissipated power (Max): | 1000 mW |
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Technical parameters/power supply voltage: | 2V ~ 5.5V |
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Technical parameters/power supply voltage (Max): | 5.5 V |
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Technical parameters/power supply voltage (Min): | 4 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 28 |
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Encapsulation parameters/Encapsulation: | QFN-28 |
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Dimensions/Length: | 6 mm |
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Dimensions/Width: | 6 mm |
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Dimensions/Height: | 0.88 mm |
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Dimensions/Packaging: | QFN-28 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PIC16F818-E/ML
|
Microchip | 类似代替 | QFN-28 |
二十零分之一十八引脚增强型闪存微控制器采用纳瓦技术 18/20-Pin Enhanced Flash Microcontrollers with nanoWatt Technology
|
||
PIC16F818T-E/ML
|
Microchip | 类似代替 | QFN-28 |
二十零分之一十八引脚增强型闪存微控制器采用纳瓦技术 18/20-Pin Enhanced Flash Microcontrollers with nanoWatt Technology
|
||
PIC16F818T-I/ML
|
Microchip | 类似代替 | QFN-28 |
PIC16 系列 128 B RAM 1792 B 闪存 增强型闪存 微控制器 - QFN-28
|
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