Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 430 mΩ |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 62.5 W |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
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Technical parameters/Continuous drain current (Ids): | 2.5A |
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Technical parameters/rise time: | 7.7 ns |
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Technical parameters/Input capacitance (Ciss): | 160pF @25V(Vds) |
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Technical parameters/descent time: | 2.5 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 65 ℃ |
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Technical parameters/dissipated power (Max): | 6.25W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223-3 |
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Dimensions/Length: | 6.7 mm |
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Dimensions/Width: | 3.7 mm |
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Dimensions/Height: | 1.7 mm |
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Dimensions/Packaging: | SOT-223-3 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PHT2NQ10T
|
NXP | 功能相似 | SC-73 |
N沟道晶体管的TrenchMOS N-channel TrenchMOS transistor
|
||
|
|
Philips | 功能相似 |
N沟道晶体管的TrenchMOS N-channel TrenchMOS transistor
|
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