Technical parameters/number of pins: | 4 |
|
Technical parameters/drain source resistance: | 0.2 Ω |
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Technical parameters/dissipated power: | 6.9 W |
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Technical parameters/threshold voltage: | 2 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/rise time: | 10 ns |
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Technical parameters/descent time: | 21 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223-3 |
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Dimensions/Length: | 6.7 mm |
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Dimensions/Width: | 3.7 mm |
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Dimensions/Height: | 1.7 mm |
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Dimensions/Packaging: | SOT-223-3 |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 功能相似 | SOT-223 |
PHT4NQ10LT N沟道MOSFET 100V 3.5A SOT-223/SC-73/TO261-4 marking/标记 4NQ10L 高密度/DMOS技术
|
||
|
|
Nexperia | 功能相似 | SOT-223-3 |
晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 5 V, 2 V
|
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