Technical parameters/number of channels: | 1 |
|
Technical parameters/dissipated power: | 88 W |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/rise time: | 19 ns |
|
Technical parameters/Input capacitance (Ciss): | 959pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 88 W |
|
Technical parameters/descent time: | 15 ns |
|
Technical parameters/dissipated power (Max): | 88W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Width: | 4.7 mm |
|
Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF630PBF
|
International Rectifier | 功能相似 | Through Hole |
功率MOSFET Power MOSFET
|
||
PHP9NQ20T
|
NXP | 类似代替 | SOT-78 |
N沟道晶体管的TrenchMOS N-channel TrenchMOS transistor
|
||
|
|
Philips | 类似代替 |
N沟道晶体管的TrenchMOS N-channel TrenchMOS transistor
|
|||
PHP9NQ20T,127
|
NXP | 功能相似 | TO-220-3 |
MOSFET N-CH 200V 8.7A TO220AB
|
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