Technical parameters/drain source resistance: | 0.056 Ω |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 6.25 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 150 V |
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Technical parameters/Continuous drain current (Ids): | 5.00 A |
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Technical parameters/Input capacitance (Ciss): | 1150pF @25V(Vds) |
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Technical parameters/rated power (Max): | 6.25 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 6.25W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.45 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS2572
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Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS2572 晶体管, MOSFET, N沟道, 4.9 A, 150 V, 0.04 ohm, 10 V, 4 V
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Philips | 完全替代 |
的TrenchMOS ™标准水平FET TrenchMOS⑩ standard level FET
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PHK5NQ15T
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NXP | 完全替代 | SO |
的TrenchMOS ™标准水平FET TrenchMOS⑩ standard level FET
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PHK5NQ15T
|
Nexperia | 完全替代 | 8 |
的TrenchMOS ™标准水平FET TrenchMOS⑩ standard level FET
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PHK5NQ15T,518
|
Nexperia | 功能相似 | SOIC-8 |
N 通道 MOSFET，1A 至 9A，NXP Semiconductors ### MOSFET 晶体管，NXP Semiconductors
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PHK5NQ15T,518
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NXP | 功能相似 | SOIC-8 |
N 通道 MOSFET，1A 至 9A，NXP Semiconductors ### MOSFET 晶体管，NXP Semiconductors
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