Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 400 V |
|
Technical parameters/Maximum allowable collector current: | 4A |
|
Technical parameters/minimum current amplification factor (hFE): | 10 @2A, 5V |
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Technical parameters/rated power (Max): | 26 W |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 | SOT-78 |
Silicon Diffused Power Transistor
|
||
PHE13005
|
We En Semiconductor | 功能相似 | TO-220 |
Silicon Diffused Power Transistor
|
||
PHE13005
|
NXP | 功能相似 | TO-220 |
Silicon Diffused Power Transistor
|
||
PHE13005X/01,127
|
NXP | 类似代替 | SOT186A |
TO-220F NPN 400V 4A
|
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