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Model PHE13003C,126
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) Single NPN 1.5A 2.1W
Product QR code
Brand: We En Semiconductor
Packaging TO-92-3
Delivery time
Packaging method
Standard packaging quantity 1
0.57  yuan 0.57yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9911) Minimum order quantity(1)
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Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

2.1 W

 

Technical parameters/breakdown voltage (collector emitter):

400 V

 

Technical parameters/Maximum allowable collector current:

1.5A

 

Technical parameters/minimum current amplification factor (hFE):

5 @1A, 2V

 

Technical parameters/maximum current amplification factor (hFE):

25

 

Technical parameters/rated power (Max):

2.1 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

2100 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-92-3

 

Dimensions/Packaging:

TO-92-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PHD13003C,126 PHD13003C,126 NXP 完全替代 TO-226-3
PHD13003C,126 盒装
PDF
PHE13003C,412 PHE13003C,412 We En Semiconductor 完全替代 TO-226-3
PHE13003C,412 袋装
PDF

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