Technical parameters/dissipated power: | 300W (Tc) |
|
Technical parameters/Input capacitance: | 7665 pF |
|
Technical parameters/drain source voltage (Vds): | 55 V |
|
Technical parameters/rise time: | 232 ns |
|
Technical parameters/Input capacitance (Ciss): | 7665pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 300 W |
|
Technical parameters/descent time: | 178 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 300W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDB8445
|
ON Semiconductor | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FDB8445 场效应管, MOSFET, N沟道, 40V, 0.0068Ω, 70A, TO-263AB-3
|
||
FDB8445
|
Fairchild | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FDB8445 场效应管, MOSFET, N沟道, 40V, 0.0068Ω, 70A, TO-263AB-3
|
||
|
|
Rochester | 功能相似 | D2PAK |
75A , 55V , 0.007 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
|
||
HUF75345S3ST
|
Intersil | 功能相似 |
75A , 55V , 0.007 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
|
|||
HUF75345S3ST
|
Fairchild | 功能相似 | TO-263-3 |
75A , 55V , 0.007 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
|
||
PHB191NQ06LT,118
|
NXP | 功能相似 | TO-263-3 |
N沟道 VDS=55V VGS=±15V ID=75A P=300W
|
||
PHB191NQ06LT,118
|
Nexperia | 功能相似 | TO-263-3 |
N沟道 VDS=55V VGS=±15V ID=75A P=300W
|
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