Technical parameters/dissipated power: | 187 W |
|
Technical parameters/drain source voltage (Vds): | 25 V |
|
Technical parameters/rise time: | 38 ns |
|
Technical parameters/Input capacitance (Ciss): | 1375pF @12V(Vds) |
|
Technical parameters/descent time: | 25 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 187W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Length: | 10.3 mm |
|
Dimensions/Width: | 9.4 mm |
|
Dimensions/Height: | 4.5 mm |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDB2572
|
ON Semiconductor | 功能相似 | TO-263-3 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDB2572, 29 A, Vds=150 V, 3引脚 D2PAK (TO-263)封装
|
||
PHB108NQ03LT
|
NXP | 功能相似 | SOT-404 |
的TrenchMOS逻辑电平FET TrenchMOS logic level FET
|
||
|
|
Philips | 功能相似 |
的TrenchMOS逻辑电平FET TrenchMOS logic level FET
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