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Model FCPF190N60

Description FAIRCHILD SEMICONDUCTOR FCPF190N60 Power Field Effect Transistor, MOSFET, N-channel, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V

Brand: Fairchild

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.17 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	39 W
Technical parameters/threshold voltage:	2.5 V
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/Continuous drain current (Ids):	20.2A
Technical parameters/Input capacitance (Ciss):	2950pF @25V(Vds)
Technical parameters/rated power (Max):	39 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	39W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.36 mm
Dimensions/Width:	4.9 mm
Dimensions/Height:	16.07 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs Information/Hong Kong Import and Export License:	NLR