Technical parameters/dissipated power: | 0.3 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 200 @1mA, 5V |
|
Technical parameters/rated power (Max): | 300 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-666 |
|
Dimensions/Packaging: | SOT-666 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSBC114YDP6T5G
|
ON Semiconductor | 功能相似 | SOT-963-6 |
双NPN偏置电阻晶体管 Dual NPN Bias Resistor Transistors
|
||
NSBC143ZPDXV6T1G
|
ON Semiconductor | 功能相似 | SOT-563-6 |
双偏置电阻晶体管 Dual Bias Resistor Transistors
|
||
PEMD13,115
|
Nexperia | 类似代替 | SOT-666 |
1 个 NPN,1 个 PNP - 预偏压式(双) 100mA 50V
|
||
PEMD13,115
|
NXP | 类似代替 | SOT-666 |
1 个 NPN,1 个 PNP - 预偏压式(双) 100mA 50V
|
||
PEMH10,115
|
Nexperia | 类似代替 | SOT-666 |
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.05 电阻比率
|
||
PEMH10,115
|
NXP | 类似代替 | SOT-666-6 |
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.05 电阻比率
|
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